#P-05


Laser Ablation Technology for Zinc Oxide Layer Deposition

Ihor VIRT1, Piotr POTERA2, Bogumił CIENIEK2, Ivan PADALKA1, Nazar BARCHUK1

1Drohobych State Pedagogical University I.Franko, I.Franko, 24, Drohobych -82100, Ukraine
2Institute of Materials Engineering, University of Rzeszow, Pigonia 1, 35-310, Rzeszow

Research uses a pulsed laser beam (laser ablation method [1,2]) to produce functional layers of zinc oxide (ZnO), which is a semiconductor and is characterized by great interest due to its optoelectronic properties, such as high optical transparency in the visible and close infrared range. In recent years, interesting optoelectronic properties of semiconductor materials have been discovered on the basis of transitional metals (TM = Ni, Cr, and Mn) have been discovered. In particular, transparent conductive oxide (TCO), promising materials for various applications, including optoelectronic devices, liquid crystalline displays, touch screens, and intelligent windows [3], aroused great interest.
Thin layers of ZnO are deposited on the Si, Al2O3 and quartz substrates by pulsed laser spraying and then annealed in air. The KGd(WO4)2Nd3+, λ = 1067 nm, pulse duration ~ 20 ns, pulse frequency 1-2 Hz, number of impulses n ~ 500, energy density 0.5 J/cm2 was used. The typical deposition speed was approximately v ~ 0.5 nm/imp. The substrate temperature during deposition was set to 200°C.
The content of nickel ions in the starting solid solution was in the range of 1-10%. The crystallographic structure was studied by X-ray diffraction (XRD). Measurements have shown that the created layer crystallizes in the vurcite phase and has a dominant orientation along the c-axis. The texture coefficient, grain size, and permanent crystalline network were calculated. According to the crystalline lattice shape coefficient, the growth of the nickel inhibits the dominant growth of the layers along the c-axis.
The optical absorption coefficient of the layers was calculated on the basis of the transmission spectra of UV-VIS-NIR light. The spectrum of absorption of ZnO and the edge of the spectrum of the photoprequet were found. The energy of the bandwidth of the prohibited thin layers, calculated by matching the linear optical absorption curve to the photon energy, decreases with the content of nickel ions. The composition of the layers significantly affects the optical constant. The spectra of photocurrents was measured and observed - current capacity of falling photons (IPCE).
The Eg value and optical properties indicate that it is characterized by a wide range of absorption, which can be used in optoelectronic devices.
References
[1] J. Yu, W. Han, A.A. Suleiman, S. Han, N. Miao, F.C. Ling, Small Methods 2301282 (2023) pp. 1-33
[2] A.J. Haide, T. Alawsi, M.J. Haider, B.A. Taha, H. A. Marhoon, Optical and Quantum Electronics 54:488 (2022) pp. 1-25
[3] V. Saravade, Z.C. Feng, M. T. Nafisa, Zhou, N. Lu, B. Klein, I. Ferguson J. Vac. Sci. Technol. A 42(2) (2024) pp. 020802-1-25